# Vault 7: Projects

This publication series is about specific projects related to the Vault 7 main publication.

### Protego

# PIC24FJ32MC10X -- Family Data Sheet

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PIC24FJ16MC101/102 AND PIC24FJ32MC101/102/104
DS39997C-page 262 Preliminary © 2011-2012 Microchip Technology Inc.
TABLE 26-8: DC CHARACTERISTICS: POWER-DOWN CURRENT (I PD)
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ T A ≤ +85°C for Industrial
-40°C ≤ T A ≤ +125°C for Extended
Parameter
No.
Typical
(1)
Max Units Conditions
Power-Down Current (IPD)
(2)
– PIC24FJ16MC1001/102 Devices
DC60d 27 250 µA -40°C
3.3V Base Power-Down Current
(3,4)
DC60a 32 250 µA +25°C
DC60b 43 250 µA +85°C
DC60c 150 500 µA +125°C
DC61d 420 600 µA -40°C
3.3V Watchdog Timer Current: ΔI
WDT
(3,5)
DC61a 420 600 µA +25°C
DC61b 530 750 µA +85°C
DC61c 620 900 µA +125°C
Power-Down Current (I
PD)
(2)
– PIC24FJ32MC101/102/104 Devices
DC60d 250 — µA -40°C
3.3V Base Power-Down Current
(3,4)
DC60a 250 — µA +25°C
DC60b 250 — µA +85°C
DC60c 500 — µA +125°C
DC61d 600 — µA -40°C
3.3V Watchdog Timer Current: ΔI
WDT
(3,5)
DC61a 600 — µA +25°C
DC61b 750 — µA +85°C
DC61c 900 — µA +125°C
Note 1: Data in the Typical column is at 3.3V, 25°C unless otherwise stated.
2: I
PD (Sleep) current is measured as follows:
• CPU core is off, oscillator is configured in EC mode, OSC1 is driven with external square wave from
rail-to-rail
• CLKO is configured as an I/O input pin in the Configuration word
• External Secondary Oscillator (S
OSC) is disabled (i.e., SOSCO and SOSCI pins are configured as
digital I/O inputs)
• All I/O pins are configured as inputs and pulled to V
SS
• MCLR = VDD, WDT and FSCM are disabled
• All peripheral modules are disabled (PMDx bits are all ones)
• VREGS bit (RCON<8>) = 1 (i.e., core regulator is set to stand-by while the device is in Sleep mode)
• On applicable devices, RTCC is disabled plus the VREGS bit (RCON<8>) = 1
3: The Δ current is the additional current consumed when the module is enabled. This current should be
added to the base I
PD current.
4: These currents are measured on the device containing the most memory in this family.
5: These parameters are characterized, but not tested in manufacturing.

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